Work

Electrical behavior of an inversion layer at aluminum(x)gallium(1-x)arsenide/gallium-arsenide heterojunction

Year: 1988

Type: dissertation

Source: Purdue e-Pubs (Purdue University System)

Author: Qi-De Qian

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3020139617

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Related to: 10