Year: 2018
Type: article
Abstract: In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.
Authors: Sidi Mohammed Merah, Bouchra Nadji
Institution: University of Boumerdes
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W3023998616