Work

Impact of fluorine doping on solution-processed In–Ga–Zn–O thin-film transistors using an efficient aqueous route

Year: 2020

Type: article

Abstract: Simple and facile solution-processed thin-film transistors (TFTs) using metal-oxide semiconductors are promising for producing large-area electronics. To achieve a high-performance solution-processed metal-oxide TFT at a low processing temperature, simple fluorine doping was performed for obtaining a solution-processed metal-oxide semiconductor through efficient metal aqua complexation. The TFTs fabricated using conventional IGZO and fluorine-doped IGZO (IGZO:F) precursors were evaluated. The IGZO:F fabricated TFT demonstrated higher mobility, better switching characteristics, and enhanced overall TFT performance. This simple, low-temperature fluorine doping technique improved the solution-processed TFT for future scalable and low-cost TFTs.

Source: AIP Advances

DOI: 10.1063/5.0003855

Authors: Masashi Miyakawa, Mitsuru Nakata, Hiroshi Tsuji, Hiroaki Iino, Yoshihide Fujisaki

Institutions: Tokyo Institute of Technology, Japan Broadcasting Corporation (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

OpenAlex ID: W3033713277

FWCI: 0.86

Cites: 27

Cited by: 24

Related to: 10