Work

Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance*

Year: 2020

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/ab99b5

Authors: Bin Wang, Sheng Hu, Yue Feng, Peng Li, Hui-Yong Hu, Bin Shu

Institution: Xidian University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3033769705

FWCI: 0.086

Cites: 25

Cited by: 6

Related to: 10