Work

Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

Year: 2020

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2020.105190

Authors: Nanda Kumar Reddy Nallabala, Srinivas Godavarthi, Venkata Krishnaiah Kummara, Mohan Kumar Kesarla, Debabrata Saha, Harish Sharma Akkera, Gopi Krishna Guntupalli, Suresh Kumar, S.V. Prabhakar Vattikuti

Institutions: Secretaría de Ciencia, Humanidades, Tecnología e Innovación, Universidad Juárez Autónoma de Tabasco, Universidad Nacional Autónoma de México, Presidency University, Indian Institute of Science Education and Research Berhampur, Kurukshetra University, Yeungnam University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Ministry of Science, ICT and Future Planning, National Research Foundation of Korea, Science and Engineering Research Board, Science for Equity, Empowerment and Development Division

Awards: G1040373499, G2408731038, G2512420356, G6827621293

OpenAlex ID: W3033770596

FWCI: 3.744

Cites: 60

Cited by: 47

Related to: 10