Van der Waals Semiconductors: Infrared Permittivity of the Biaxial van der Waals Semiconductor α‐MoO3 from Near‐ and Far‐Field Correlative Studies (Adv. Mater. 29/2020)
Year: 2020
Type: article
Abstract: In article number 1908176, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso-González, and co-workers extract the IR permittivity of the biaxial crystal α-MoO3 by correlative far- and near-field measurements, using FTIR reflectance spectroscopy and s-SNOM polariton interferometry, thus providing both an accurate permittivity model and a novel approach to extracting dielectric functions of nanomaterials. Moreover, through density functional theory, insights into the vibrational states dictating such permittivity are revealed.
Source: Advanced Materials
Authors: Gonzalo Álvarez‐Pérez, Thomas G. Folland, Ion Errea, Javier Taboada‐Gutiérrez, Jiahua Duan, Javier Martín‐Sánchez, Ana I. F. Tresguerres‐Mata, Joseph R. Matson, Andrei Bylinkin, Mingze He, Weiliang Ma, Qiaoliang Bao, José Ignacio Martín, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso‐González
Institutions: Universidad de Oviedo, Nanomaterials and Nanotechnology Research Center, Vanderbilt University, University of the Basque Country, Material Physics Center, Donostia International Physics Center, Moscow Institute of Physics and Technology, CIC nanoGUNE, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Soochow University, Ikerbasque
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3043836359