Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors
Year: 2019
Type: article
Author: Rajab Yahyazadeh
Institution: Islamic Azad University, Khoy Branch
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W3045328351