Work

SiO2 as an insulator for SiC devices

Year: 1997

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/s0167-9317(97)00041-5

Authors: C.I. Harris, V.V. Afanas'ev

Institution: KU Leuven

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W30614561

FWCI: 1.923

Cites: 48

Cited by: 41

Related to: 10