Work

Strong Impacts of Top Blocking Layer on Initial Flatband Voltage in Hf-based High-k Charge-Trapping Memory

Year: 2018

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2018.b-5-03

Authors: M. Kadoshima, M. Inoue, T. Maruyama, M. Matsuura

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3081548460

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