Work

Detaching (In,Ga)N Nanowire Films for Devices Requiring High Flexibility and Transmittance

Year: 2020

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.0c01970

Authors: Yukun Zhao, Zhiwei Xing, Lutz Geelhaar, Jianya Zhang, Wenxian Yang, Thomas Auzelle, Yuanyuan Wu, Lifeng Bian, Shulong Lu

Institutions: Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Paul Drude Institute for Solid State Electronics, Forschungsverbund Berlin, University of Science and Technology of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Deutscher Akademischer Austauschdienst, National Natural Science Foundation of China, Chinese Academy of Sciences, Ministry of Science and Technology of the People's Republic of China, Natural Science Foundation of Jiangxi Province, Natural Science Foundation of Jiangsu Province, Leibniz-Gemeinschaft

Awards: G1291784495, G2429607655, G2798066339, G4599644074, G5381905976, G6413768006

OpenAlex ID: W3088575276

FWCI: 2.028

Cites: 48

Cited by: 24

Related to: 10