Work

Growth, fabrication, and device characterization of InGaAs channel GaAs-based heterostructure field-effect transistors

Year: 1996

Type: dissertation

Author: Barbara Landini

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3089988

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