Work

Quantum Mechanical Study of the Magnetization Effect on the Electronic Structure of Si: P

Year: 2020

Type: conference-paper

Abstract: Non-collinear calculation of the electronic structure of silicon doped with phosphorus were performed. The dependence of the energy gap between the donor level and the bottom of the conduction band on the phosphorus atom magnetization is investigate, the possibility of manipulation of the phosphorus atom spin using a magnetic field is shown.

Source: International Conference on Mathematical Modeling in Materials Science of Electronic Components (MMMSEC)

DOI: 10.29003/m1534.mmmsec-2020/109-112

Authors: Anton Gnidenko, Andrey Chibisov, Maria Chibisova, Anastasiya Prohorenko

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Siberian Branch, Russian Academy of Sciences, Far East Branch, Russian Academy of Sciences, Russian Academy of Sciences

OpenAlex ID: W3094886522

FWCI: 13.3

Cites: 54

Cited by: 23

Related to: 10