Work

TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

Year: 2020

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.23919/sispad49475.2020.9241687

Authors: Ravi Tiwari, Nilotpal Choudhury, Tarun Samadder, Subhadeep Mukhopadhyay, Narendra Parihar, Souvik Mahapatra

Institution: Indian Institute of Technology Bombay

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3095200091

FWCI: 0.349

Cites: 11

Cited by: 1

Related to: 10