Work

Structural properties and surface roughness of heterostructure GaN/AlN on Si (100) substrate

Year: 2020

Type: conference-paper

Source: IEEE Student Conference on Research and Development (SCOReD)

DOI: 10.1109/scored50371.2020.9250956

Authors: Anis Suhaili Bakri, Nafarizal Nayan, Ahmad Shuhaimi Abu Bakar, Zulkifli Azman, Nur Amaliyana Raship, Muliana Tahan, Riyaz Ahmad Mohamed Ali

Institutions: Tun Hussein Onn University of Malaysia, University of Malaya, National Defence University of Malaysia

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: K2

OpenAlex ID: W3098819838

FWCI: 0.599

Cites: 14

Cited by: 1

Related to: 10