Work

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Year: 2020

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/abd278

Authors: Kookjin Lee, Yeonsu Kim, Hyebin Lee, Sojeong Park, Yongwoo Lee, Min-Kyu Joo, Hyunjin Ji, Jaewoo Lee, Jungu Chun, Moonsoo Sung, Young-Hoon Cho, Doyoon Kim, Junhee Choi, Jae Woo Lee, Dae-Young Jeon, Sung-Jin Choi, Gyu-Tae Kim

Institutions: IMEC, KU Leuven, Korea University, Samsung Electronics (South Korea), Kookmin University, Sookmyung Women's University, University of Ulsan, SK Hynix (South Korea), Defense Agency for Technology and Quality, Korea Institute of Science and Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3111577458

FWCI: 0.258

Cites: 38

Cited by: 5

Related to: 10