Year: 2020
Type: article
Abstract: Semiconductor-in-glass composites are an exciting class of photonic materials for various fundamental applications. The significant challenge is the scalable elaboration of composite with the desirable combination of tunable structure, high semiconductor loading ratio, and excellent transparency. Here we report that the topological engineering strategy via hybridization of the glass network former enables to surmount the aforementioned challenge. It not only facilitates the in situ precipitation of (Ga 2-x Al x )O 3 domains with continuously tunable composition but also allows to simultaneously refine the grain size and enhance the crystallinity. In addition, the composites exhibit excellent transparency and can host various active dopants. We demonstrate the attractive broadband optical response of the composite and achieve the pulse laser operation in mid-infrared waveband. The findings are expected to provide a fundamental principle of in situ modification in hybrid system for generation of high-performance semiconductor-in-glass composites.
Source: iScience
Institutions: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Shandong University, State Key Laboratory of Crystal Materials, Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communications, Zhejiang University
Language: English
Subfield: Ceramics and Composites
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,000
OpenAlex ID: W3116834084