Year: 2021
Type: article
Abstract: We have studied the formation of an ultrathin Ge crystalline layer by thermal annealing of Ag/Ge(100) and Ag/Ge(111) to obtain insights into the growth kinetics of two-dimensional Ge crystal. An atomic force microscope was used to evaluate the effect of the surface orientation of the Ge substrate on the surface morphology change by annealing in N 2 ambience at atmospheric pressure. Moreover, a very flat surface was obtained for both Ag/Ge(100) and the Ag/Ge(111) by controlling the anneal temperature. In addition, analysis of the Raman scattering spectroscopy indicated the formation of surface segregated Ge with high crystallinity on a flat Ag surface.
Institution: Nagoya University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Awards: Formation of Ge two-dimensional crystals embedded into Si oxide and its device application, Fabrication and Characterization of High-density Superatom-like Ge-core/Si-shell Quantum Dot for Light Emission, Formation and Characterization of Germanium Two-Dimensional Crystal on Insulating Substrate, Fabrication and Characterization of Super-atom-like Hybrid Nanodots for New Functional Devices
OpenAlex ID: W3120959103