Work

33.1 A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability

Year: 2021

Type: conference-paper

Source: Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

DOI: 10.1109/isscc42613.2021.9365828

Authors: Hsuan-Yu Chen, Yu-Yung Kao, Zhi-Qiang Zhang, Cheng-Hsiang Liao, Hong-Yuan Yang, Ming-Sheng Hsu, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Institutions: National Yang Ming Chiao Tung University, Realtek (Taiwan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3134318521

FWCI: 25.34

Cites: 10

Cited by: 42

Related to: 10