Work

Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT

Year: 2021

Type: article

Source: Silicon

DOI: 10.1007/s12633-021-01039-x

Authors: Rajrup Mitra, Akash Roy, Arnab Mondal, Atanu Kundu

Institutions: Tata Consultancy Services (India), University of Southern California, Politecnico di Milano, Heritage Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3135908068

FWCI: 0.288

Cites: 32

Cited by: 4

Related to: 10