Work

Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices

Year: 2021

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.0c00840

Authors: Han Zhang, Bowen Shi, Lin Xu, Junfeng Yan, Wu Zhao, Zhiyong Zhang, Zhiyong Zhang, Jing Lu

Institutions: Peking University, Northwest University, Collaborative Innovation Center of Quantum Matter

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, Education Department of Shaanxi Province

Awards: G201766149, G2959832409, G3152448392, G3439291829, G4207483116, G4806454654, G5989642111, G6658061308

OpenAlex ID: W3137579192

FWCI: 4.84

Cites: 41

Cited by: 124

Related to: 10