Work

Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique

Year: 2006

Type: conference-paper

Source: 2006 International SiGe Technology and Device Meeting

DOI: 10.1109/istdm.2006.246538

Authors: T. Berer, D. Pachinger, G. Pillwein, M. Muhlberger, H. Lichtenberger, G. Brunthaler, F. Schaffler

Institution: Johannes Kepler University of Linz

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3143025331

FWCI:

Cites: 5

Cited by:

Related to: 10