Work

High-performance SiC power devices and modules with high temperature operation

Year: 2011

Type: conference-paper

Source: International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

DOI: 10.1109/vtsa.2011.5872246

Authors: T. Nakamura, Y. Nakano, M. Sasagawa, T. Otsuka, M. Aketa, M. Miura

Institution: ROHM

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

Funder: University of Arkansas

OpenAlex ID: W3148967653

FWCI:

Cites:

Cited by: 1

Related to: 10