Ultra-thin and high transparent Cu2ZnSnSe4/NiOx double-layered inorganic hole-transporting layer for inverted structure CH3NH3PbI3 perovskite solar cells
Year: 2021
Type: article
Abstract: Inorganic hole transporting layer (HTL) plays the most important role to fabrication of low cost and stable in perovskite solar cells. Herein, we present low cost highly transparent and ultra-thin sputtered Cu2ZnSnSe4 (CZTSe) combined with solution-processed NiOx films as a double-layered inorganic HTL applied in inverted CH3NH3PbI3 perovskite solar cells, which is beneficial to enhance hole extraction and suppress electron transport. Sputtered CZTSe films have high transmittance (> 85%), high hole mobility (15.1 cm2 v−1 s−1), low resistivity (0.33 Ω-cm), earth-abundant elemental constituents, and non-toxic properties, which is one of the promising p-type inorganic hole-transporting material. An obvious enhancement of open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of a 600 °C-annealed-CZTSe/NiOx double-layered HTL based inverted perovskite solar cell was observed, and final Voc, Jsc, FF, and PCE of 1.03 V, 17.9 mA cm−2, 73%, and 13.46% were achieved, respectively. Importantly, the ultra-thin CZTSe/NiOx double-layer HTL makes the perovskite solar cell exhibit improved stability, of which this device remains 73% of the initial PCE value after 350 h′ storage in the nitrogen-filled glove box.
Source: Journal of Alloys and Compounds
Authors: Ching-Ho Tien, Lung-Chien Chen, Kuan-Lin Lee
Institution: National Taipei University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,050
OpenAlex ID: W3153288366