Work

Lifetime elongation of quantum-dot light-emitting diodes by inhibiting the degradation of hole transport layer

Year: 2021
Type: article
Abstract: -(4-secbutylphenyl))-diphenylamine)] (TFB) hole-transporting layer and also confined the electron in the QD-emitting layer. Although the TFB/PVK HTL structure is a well-known pair to enhance the device performance, its detailed mechanisms were rarely mentioned, especially for relative operational lifetime issues. Herein, a new insight behind operational lifetime elongation of QDLED is disclosed through various fundamental experiments including steady-state photoluminescence, transient electroluminescence and single-carrier only devices. Evidently, other than QD degradation, this study found that the other crucial factor that decreased the device lifetime was TFB-HTL degradation using steady-state photoluminescence and transient electroluminescence analyses. The PVK electron-only device exhibited a stable voltage value when it was driven by fixed current, which also affirmed that PVK has excellent electron-stability characteristics.
Source: RSC Advances
Language: English
Open Access status: gold
Estimated APC paid: $1,042
OpenAlex ID: W3170528126
FWCI: 0.568
Cites: 46
Cited by: 15
Related to: 10