Year: 2021
Type: article
Abstract: A flux-controlled memristor using complementary metal–oxide–(CMOS) structure is presented in this study. The proposed circuit provides higher power efficiency, less static power dissipation, lesser area, and can also reduce the power supply by using CMOS 90nm technology. The circuit is implemented based on the use of a second-generation current conveyor circuit (CCII) and operational transconductance amplifier (OTA) with few passive elements. The proposed circuit uses a current-mode approach which improves the highfrequency performance. The reduction of a power supply is a crucial aspect to decrease the power consumption in VLSI. An offered emulator in this proposed circuit is made to operate incremental and decremental configurations well up to 26.3 MHZ in cadence virtuoso platform gpdk using 90nm CMOS technology. proposed memristor circuit has very little static power dissipation when operating with ±1V supply. Transient analysis, memductance analysis, and dc analysis simulations are verified practically with the Experimental demonstration by using ideal memristor made up of ICs AD844AN and CA3080, using multisim which exhibits theoretical simulation are verified and discussed.
Authors: B.T. Krishna, Shaik. mohaseena Salma
Institution: Jawaharlal Nehru Technological University, Kakinada
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3171069341