Work

Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes

Year: 2021

Type: article

Source: Surfaces and Interfaces

DOI: 10.1016/j.surfin.2021.101297

Authors: V. Balasubramani, J. Chandrasekaran, V. Manikandan, Top Khac Le, R. Marnadu, P. Vivek

Institutions: Ramakrishna Mission Vidyalaya, Kongunadu Arts and Science College, University of Ulsan

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Ministry of Science and Technology, India

Award: G1470454874

OpenAlex ID: W3173732003

FWCI: 2.378

Cites: 68

Cited by: 50

Related to: 10