Work

Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm

Year: 2021

Type: article

Source: IEEE Journal of Quantum Electronics

DOI: 10.1109/jqe.2021.3111402

Authors: Syed Ahmed Al Muyeed, Damir Borovac, Haotian Xue, Xiongliang Wei, Renbo Song, Nelson Tansu, Jonathan J. Wierer

Institutions: Lehigh University, The University of Adelaide

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Award: Synthesis of Controlled III-Nitride Nanostructures

OpenAlex ID: W3199064321

FWCI: 0.192

Cites: 48

Cited by: 5

Related to: 10