Work

Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read

Year: 2021

Type: article

Source: Nanoscale

DOI: 10.1039/d1nr05107e

Authors: Halid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck

Institutions: NaMLab (Germany), GlobalFoundries (Germany), Technische Universität Dresden

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3200367387

FWCI: 3.819

Cites: 46

Cited by: 69

Related to: 10