‘HJT 2.0’ Performance Improvements and Cost Benefits for Silicon Heterojuntion Cell Production
Year: 2019
Type: article
Abstract: Silicon heterojunction technology (HJT) for mass production frequently meets reservations related to the performance and cost constraints the standard TCO on the cell front side namely indium tin oxide (ITO) constitutes. We address and mitigate these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of much thinner ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an improvement in device efficiency of typically 0.2% absolute due to increased cell current and a considerable cost saving of around 0.5ct$/Wp with respect to cost of ownership (CoO) for the module.
Source: EU PVSEC
Authors: Bätzner, D.L., Papet, P., Legradic, B., Lachenal, D., Kramer, R., Kössler, T., Andreetta, L., Holm, N., Frammelsberger, W., Strahm, B.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W3202543695