Work

TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices

Year: 2021

Type: conference-paper

Source: International Seminar on Power Semiconductors (ISPS)

DOI: 10.14311/isps.2021.012

Authors: A. Lachichi, P. Mawby

Institution: University of Warwick

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3203369833

FWCI:

Cites: 10

Cited by:

Related to: 10