Work

Ohmic contacts optimisation for high-power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure E-beam lithography approach

Year: 2021

Type: article

Source: ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)

Authors: Davide Cimbri, Nils Weimann, Qusay Raghib Al Al-Taai, Afesomeh Ofiare, Edward Wasige

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W3204854871

FWCI: 0.218

Cites:

Cited by: 2

Related to: 10