ゲルマニウムベース半導体デバイスの界面磁気抵抗効果とバルク磁気抵抗効果【jst・京大機械翻訳】
Year: 2021
Type: article
Source: Cailiao daobao
Authors: Yu Han, He Xiong, Zhang Kongbin, Bin He, Luo Feng, Zhigang Sun
Language: Japanese
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W3208480889