Work

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

Year: 2021

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/d1tc04022g

Authors: Zhongxin Wang, Guodong Wang, Xintong Liu, Shouzhi Wang, Tailin Wang, Shiying Zhang, Jiaoxian Yu, Gang Zhao, Lei Zhang

Institutions: Shandong University, State Key Laboratory of Crystal Materials, Qilu University of Technology, Shandong Academy of Sciences, Shandong Jianzhu University, University of Jinan

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province

Awards: GaN晶体的应力、缺陷和能带结构之间关系的研究, G8871164521

OpenAlex ID: W3209941720

FWCI: 6.269

Cites: 153

Cited by: 112

Related to: 10