2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2
Year: 2021
Type: article
Institutions: Hebei Semiconductor Research Institute, Nanjing University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W3210047568
