Work

MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells

Year: 2021

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2021.126423

Authors: Koji Okuno, Koichi Mizutani, Kazuyoshi Iida, Masaki Ohya, Naoki Sone, Weifang Lu, Renji Okuda, Yoshiya Miyamoto, Kazuma Ito, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Institutions: Koito Manufacturing (Japan), Meijo University, Nagoya University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science, Japan Science and Technology Agency

OpenAlex ID: W3211928660

FWCI: 0.192

Cites: 63

Cited by: 2

Related to: 10