Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage
Year: 2021
Type: article
Source: Physica B Condensed Matter
Authors: Najla S. Al-Shameri, Hassen Dakhlaoui
Institution: Imam Abdulrahman Bin Faisal University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W3211963195