Work

Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

Year: 2021

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2021.3127489

Authors: Sailesh Rajasekaran, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Aftab Saleem, Tseung-Yuen Tseng

Institutions: National Yang Ming Chiao Tung University, Dr. M.G.R. Educational and Research Institute, National Institute of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Ministry of Science and Technology, Taiwan, Science and Engineering Research Board

Awards: G4207343805, G497937365, 1 Selector/1 Resistor Structured Transparent and Flexible Resistive Randon Access Memory for Neuromorphic Applications

OpenAlex ID: W3212499378

FWCI: 1.689

Cites: 29

Cited by: 42

Related to: 10