Work

Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

Year: 2021

Type: conference-paper

Source: International Workshop on Junction Technology

DOI: 10.23919/iwjt52818.2021.9609366

Authors: Yuta Sato, Hirokazu Fujiwara, Nobuyoshi Saito, Tomomasa Ueda, Keiji Ikeda

Institution: KIOXIA Corporation (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3215029946

FWCI: 1.57

Cites: 15

Cited by: 6

Related to: 10