Work

Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs

Year: 2021

Type: conference-paper

Source: IEEE Energy Conversion Congress and Exposition (ECCE)

DOI: 10.1109/ecce47101.2021.9595264

Authors: Ryunosuke Katada, Katsuhiro Hata, Yoshitaka Yamauchi, Ting-Wei Wang, Ryuzo Morikawa, Cheng-Hsuan Wu, Toru Sai, Po-Hung Chen, Makoto Takamiya

Institutions: The University of Tokyo, National Yang Ming Chiao Tung University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3215042581

FWCI: 3.083

Cites: 7

Cited by: 10

Related to: 10