Year: 2021
Type: article
Abstract: The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al 2 O 3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. However, the surface band-bending of GaN that could be influenced by the Al 2 O 3 has been unknown. In this work, the band-bending of c -plane, Ga-face GaN with ultrathin Al 2 O 3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy. The study shows that the Al 2 O 3 can help suppress the upward band-bending of the c -plane, Ga-face GaN with a monotonic reduction trend from 0.48 eV down to 0.12 eV as the number of Al 2 O 3 deposition cycles increases from 0 to 20. The study further shows that the band-bending can be mostly recovered after removing the Al 2 O 3 layer, concurring that the introduction of ultrathin Al 2 O 3 is the main reason for the surface band-bending modulation.
Authors: Jiarui Gong, Kuangye Lu, Jisoo Kim, TienKhee Ng, Donghyeok Kim, Jie Zhou, Dong Liu, Jeehwan Kim, Boon S. Ooi, Zhenqiang Ma
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Award: G3519676736
OpenAlex ID: W3215775334