Work

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

Year: 2021

Type: article

Abstract: AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO2 gate dielectric, however, is known to degrade the oxide/nitride interface due to the formation of Ga-containing oxide. In this work, the undoped HfO2 gate dielectric was spike-annealed at 600 °C after the film was deposited by atomic layer deposition to improve the ferroelectricity without degrading the interface. As a result, the subthreshold slope of AlGaN/GaN MOS-HEMTs close to 60 mV/dec and on/off ratio>109 were achieved. These results suggest optimizing the HfO2/nitride interface can be a critical step towards a low-loss high-power switching device.

Source: Micromachines

DOI: 10.3390/mi12121441

Authors: Min Jae Yeom, Jeong Yong Yang, Chan Ho Lee, Junseok Heo, Roy Byung Kyu Chung, Geonwook Yoo

Institutions: Soongsil University, Ajou University, Kyungpook National University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,944

Funder: National Research Foundation of Korea