Work

Active Gate Driving Technique for Series Connecting SiC MOSFETs in the Presence of Gate Pulse Delay Mismatch

Year: 2021

Type: article

Source: IEEE Transactions on Industrial Electronics

DOI: 10.1109/tie.2021.3128907

Authors: Vamshi Krishna Miryala, Saravanan Dhanasekaran, P. Ganesan, Kamalesh Hatua, Subhashish Bhattacharya

Institutions: Indian Institute of Technology Madras, North Carolina State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Ministry of Electronics and Information technology

Award: G2647716132

OpenAlex ID: W3217602007

FWCI: 1.175

Cites: 19

Cited by: 28

Related to: 10