Year: 2013
Type: article
Abstract: A novel simple and efficient model of Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) using Verilog-A is presented. The model accurately emulates the main properties of an STT-MTJ which includes Tunnel Magneto Resistance Ratio (TMR), its dependence on the voltage bias and the critical switching current. The novelty of the model lies in the fact that the voltage dependence of TMR has been modeled using a single equation. The model can be used for faster simulations of hybrid Magnetic CMOS circuits and in various other wide range of applications. The model was developed in Verilog-A and verified using Synopsys Hspice 2010.
Authors: Rishubh Garg, Jyoti Kedia
Institution: Punjab Engineering College
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W32680064