1050nm帯InGaAs/GaAsP歪み補償単一量子井戸 : 高信頼性・高出力半導体レーザ
Year: 2002
Type: article
Source: Technical report of IEICE. OPE
Language: Japanese
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W33576908
