Work

Preliminary measurements of gamma ray effects on characteristics of broad-band GaAs field-effect transistor preamplifiers

Year: 1985

Type: report

Abstract: The effect of gamma radiation on electrical characteristics of cryogenically cooled broad-band low-noise microwave preamplifiers has been preliminarily evaluated. The change in the gain and noise figure of a 1-2 GHz preamplifier using GaAs microwave transistors was determined at gamma doses between 10/sup 5/ rad to 5 /times/ 10/sup 8/ rad. The gain and noise figure was measured at ambient temperatures of 300 K and 80 K. 8 refs., 2 figs.

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

DOI: 10.2172/5126571

Authors: H.G. Jackson, T.T. Shimizu, B. Leskovar

Institutions: Lawrence Berkeley National Laboratory, University of California, Berkeley

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: U.S. Department of Energy, Nuclear Physics

Awards: G1398330795, G1643223109, G193590374

OpenAlex ID: W344840985

Cites: 5

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Related to: 10