Work

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Year: 2021

Type: article

Source: Technical Physics Letters

DOI: 10.1134/s106378502108006x

Authors: N. A. Cherkashin, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, V. M. Ustinov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. F. Tsatsul’nikov

Institutions: Centre National de la Recherche Scientifique, Centre d’Élaboration de Matériaux et d’Études Structurales, Université de Toulouse, Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center, Ioffe Institute, Institute of Problems of Mechanical Engineering, St Petersburg University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4200213531

FWCI: 0.864

Cites: 8

Cited by: 9

Related to: 10