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Ultrafast and stable phase transition realized in MoTe 2 -based memristive devices

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Year: 2021
Type: article
Source: Materials Horizons
DOI: 10.1039/d1mh01772a
Authors: Hui-Kai He, Yong-Bo Jiang, Jun Yu, Zi-Yan Yang, Chao-Fan Li, Ting-Ze Wang, De-Quan Dong, Fu-Wei Zhuge, Ming Xu, Zhi-Yi Hu, Rui Yang, Xiang-Shui Miao
Institutions: Wuhan National Laboratory for Optoelectronics, State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan University of Technology, State Key Laboratory of Advanced Technology For Materials Synthesis and Processing
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities
Awards: 超薄二维过渡金属硫化物二阶忆阻突触器件及其阻变机制研究, G2875007038, 基于同步辐射的钙钛矿关联氧化物类电池忆阻突触权重调控及其阻变机制研究
OpenAlex ID: W4200310875
FWCI: 1.028
Cites: 41
Cited by: 46
Related to: 10
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