Work

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Year: 2021

Type: article

Source: Micro and Nanostructures

DOI: 10.1016/j.spmi.2021.107116

Authors: Giuseppe Di Gioia, Mohammed Samnouni, Vinay Chinni, Priyanka Mondal, Jeanne Treuttel, Malek Zegaoui, Guillaume Ducournau, Mohammed Zaknoune, Yannick Roelens

Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Polytechnique Hauts-de-France, Centrale Lille Institut, Laboratoire d’Etudes du Rayonnement et de la Matière en Astrophysique et Atmosphères

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funder: Agence Nationale de la Recherche

Award: GaN Schottky diodes for THz generation

OpenAlex ID: W4200317625

FWCI: 0.384

Cites: 29

Cited by: 5

Related to: 10