Work

RF small-signal modeling of HCI degradation in FDSOI NMOSFET using BSIM-IMG

Year: 2021

Type: conference-paper

Abstract: The increasing demand for reliable CMOS devices in high-frequency applications brings new challenges in the modeling of aging effects in transistors, with the need to also capture degradation of RF performance. In this paper, we explore the possibilities of using BSIM-IMG parameters to model HCI degradation under DC stress on a 22FDX™ FDSOI n-channel transistor. First, a selection of parameters is used to model HCI degradation and its impact on RF performance is analyzed. Furthermore, the “extension resistance model” within BSIM-IMG is used to broaden the model possibilities to capture RF performance degradation

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/iirw53245.2021.9635622

Authors: Fabio A. Velarde Gonzalez, Andre Lange, Talha Chohan, Thomas Mikolajick

Institutions: Fraunhofer Institute for Integrated Circuits IIS, Division Engineering of Adaptive Systems EAS, NaMLab (Germany), Technische Universität Dresden

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: Freistaat Sachsen, European Regional Development Fund

OpenAlex ID: W4200323971

FWCI: 0.385

Cites: 10

Cited by: 1

Related to: 10