Year: 2021
Type: conference-paper
Abstract: Photoluminescence and X-ray diffraction (XRD) were used for the studies of the properties of HgCdTe samples with CdTe molar fraction x=0.3 grown by various methods. According to the results of photoluminescence studies, all samples possessed a considerable degree of alloy disorder, yet the scale of the disorder seemed not to be directly related to the structural quality of the material as revealed using XRD. Prospects of using HgCdTe material grown by various methods in optoelectronic devices are discussed.
Institutions: ITMO University, Ioffe Institute
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4200469404